Infineon HEXFET N-Channel MOSFET, 6.3 A, 20 V Enhancement, 3-Pin SOT-23 IRLML6244TRPBF

RS Stock No.:: 737-7228
Distrelec Article No.:: 304-45-316
Mfr. Part No.:: IRLML6244TRPBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 6.3 A, 20 V Enhancement, 3-Pin SOT-23 IRLML6244TRPBF

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Subtotal (1 pack of 20 units)*

Kr. 66,12

(exc. VAT)

Kr. 82,64

(inc. VAT)

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Units	Per unit	Per Pack*
20 - 140	Kr. 3,306	Kr. 66,12
160 - 740	Kr. 1,43	Kr. 28,60
760 - 1480	Kr. 1,241	Kr. 24,82
1500 +	Kr. 1,076	Kr. 21,52

*price indicative

RS Stock No.:: 737-7228
Distrelec Article No.:: 304-45-316
Mfr. Part No.:: IRLML6244TRPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	6.3A
	Maximum Drain Source Voltage Vds	20V
	Package Type	SOT-23
	Series	HEXFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	27mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	-12V, +12V
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	1.3W
	Typical Gate Charge Qg @ Vgs	8.9nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Width	1.4mm
	Length	3.04mm
	Height	1.02mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 6.3A
	Maximum Drain Source Voltage Vds 20V
	Package Type SOT-23
	Series HEXFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 27mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs -12V, +12V
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 1.3W
	Typical Gate Charge Qg @ Vgs 8.9nC
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Width 1.4mm
	Length 3.04mm
	Height 1.02mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 20V Maximum Drain Source Voltage, 6.3A Maximum Continuous Drain Current - IRLML6244TRPBF

This MOSFET is a low-voltage switching transistor designed for surface-mount applications where compact power handling is required. It functions as an N-channel enhancement device suitable for power-management roles in densely populated electronic assemblies. The component operates across a wide temperature range and tolerates standard gate-drive excursions, making it appropriate for high-efficiency DC-DC conversion and general switching duties.

Features and Benefits:

• Very low on-resistance 27mΩ reduces conduction losses
• Continuous drain current 6.3A supports higher load currents
• Drain-source voltage rating 20V enables low-voltage power designs
• Maximum power dissipation 1.3W allows sustained thermal loading
• Gate charge 8.9nC enables efficient switching performance
• Gate-source tolerance 12V permits robust drive margin

Applications

• Suitable for DC-DC converter stages in compact electronics
• Ideal for battery management and portable power circuits
• Used with switching regulators in telecom equipment
• Can be used for load switching in small motor drivers
• Useful for power path control in consumer devices

What temperature extremes can it withstand in operation?

It is rated for operation from -55°C up to 150°C, allowing use in harsh thermal environments.

How does package choice affect thermal and assembly considerations?

The SOT-23 surface-mount package minimises board footprint and supports automated placement while limiting thermal conduction compared with larger packages.

What pin configuration is available for PCB layout?

The device presents a three-pin arrangement compatible with standard SOT-23 land patterns for straightforward routing.

How does channel behaviour influence design topology?

As an N-channel enhancement device, it requires a positive gate drive relative to source to switch and is suited to low-side switching or synchronous rectification roles.