onsemi MMBF170L Type N-Channel MOSFET, 500 mA, 60 V Enhancement, 3-Pin SOT-23 MMBF170
- RS Stock No.:
- 739-0357
- Mfr. Part No.:
- MMBF170
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 10 units)*
Kr.16 93
(exc. VAT)
Kr.21 16
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Supply shortage
- 180 left, ready to ship
- Plus 30 left, ready to ship from another location
- Plus 8 450 left, shipping from 02. januar 2026
Our current stock is limited and our suppliers are expecting shortages.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | Kr. 1,693 | Kr. 16,93 |
| 100 - 240 | Kr. 1,453 | Kr. 14,53 |
| 250 - 490 | Kr. 1,258 | Kr. 12,58 |
| 500 - 990 | Kr. 1,11 | Kr. 11,10 |
| 1000 + | Kr. 1,018 | Kr. 10,18 |
*price indicative
- RS Stock No.:
- 739-0357
- Mfr. Part No.:
- MMBF170
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 500mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | MMBF170L | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 300mW | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 2.92mm | |
| Height | 0.93mm | |
| Width | 1.3 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 500mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series MMBF170L | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 300mW | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 2.92mm | ||
Height 0.93mm | ||
Width 1.3 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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