Infineon OptiMOS 3 Type N-Channel MOSFET, 21 A, 150 V Enhancement, 8-Pin TSDSON BSZ520N15NS3GATMA1

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Kr.28 28 

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Kr.35 36 

(inc. VAT)

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2 - 18Kr. 14,14Kr. 28,28
20 - 48Kr. 13,04Kr. 26,08
50 - 98Kr. 12,215Kr. 24,43
100 - 198Kr. 11,255Kr. 22,51
200 +Kr. 10,295Kr. 20,59

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Packaging Options:
RS Stock No.:
754-5389
Mfr. Part No.:
BSZ520N15NS3GATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

21A

Maximum Drain Source Voltage Vds

150V

Package Type

TSDSON

Series

OptiMOS 3

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

52mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

57W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

8.7nC

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Height

1.1mm

Width

3.4 mm

Standards/Approvals

No

Length

3.4mm

Automotive Standard

No

Infineon OptiMOS™3 Power MOSFETs, 100V and over


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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