onsemi UltraFET Type N-Channel MOSFET, 3 A, 250 V Enhancement, 8-Pin SOIC FDS2734

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Subtotal (1 pack of 2 units)*

Kr.58 80 

(exc. VAT)

Kr.73 50 

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 18Kr. 29,40Kr. 58,80
20 - 198Kr. 25,34Kr. 50,68
200 - 998Kr. 21,965Kr. 43,93
1000 +Kr. 19,275Kr. 38,55

*price indicative

Packaging Options:
RS Stock No.:
759-9197
Mfr. Part No.:
FDS2734
Brand:
onsemi
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Brand

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

3A

Maximum Drain Source Voltage Vds

250V

Package Type

SOIC

Series

UltraFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

225mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

2.5W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

32nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

1.5mm

Length

4mm

Standards/Approvals

No

Width

5 mm

Automotive Standard

No

UltraFET® MOSFET, Fairchild Semiconductor


UItraFET® Trench MOSFET combine characteristics that enable Benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.

Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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