onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 3.5 A, 100 V Enhancement, 8-Pin SOIC FDS89141

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Subtotal (1 pack of 2 units)*

Kr.52 90 

(exc. VAT)

Kr.66 12 

(inc. VAT)

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  • 2 326 unit(s) shipping from 29. desember 2025
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Units
Per unit
Per Pack*
2 - 18Kr. 26,45Kr. 52,90
20 - 198Kr. 22,79Kr. 45,58
200 - 998Kr. 19,77Kr. 39,54
1000 +Kr. 17,39Kr. 34,78

*price indicative

Packaging Options:
RS Stock No.:
759-9699
Mfr. Part No.:
FDS89141
Brand:
onsemi
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Brand

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

3.5A

Maximum Drain Source Voltage Vds

100V

Package Type

SOIC

Series

PowerTrench

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

107mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

31W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.8V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

5.1nC

Transistor Configuration

Isolated

Maximum Operating Temperature

150°C

Width

5 mm

Length

4mm

Height

1.5mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor


ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.

The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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