STMicroelectronics MDmesh N-Channel MOSFET, 17 A, 650 V Enhancement, 3-Pin TO-220 STP24NM60N
- RS Stock No.:
- 760-9679
- Mfr. Part No.:
- STP24NM60N
- Brand:
- STMicroelectronics
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
Kr. 43,01
(exc. VAT)
Kr. 53,76
(inc. VAT)
FREE delivery for online orders over 750,00 kr
Temporarily out of stock
- Shipping from 05 January 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | Kr. 43,01 |
| 10 - 99 | Kr. 18,88 |
| 100 - 499 | Kr. 17,81 |
| 500 - 999 | Kr. 16,09 |
| 1000 + | Kr. 15,23 |
*price indicative
- RS Stock No.:
- 760-9679
- Mfr. Part No.:
- STP24NM60N
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220 | |
| Series | MDmesh | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 190mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 46nC | |
| Forward Voltage Vf | 1.6V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 125W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10.4mm | |
| Width | 4.6mm | |
| Height | 15.75mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220 | ||
Series MDmesh | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 190mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 46nC | ||
Forward Voltage Vf 1.6V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 125W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10.4mm | ||
Width 4.6mm | ||
Height 15.75mm | ||
Automotive Standard No | ||
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Related links
- STMicroelectronics MDmesh Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- STMicroelectronics MDmesh Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 STF24NM60N
- STMicroelectronics MDmesh Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263
- STMicroelectronics MDmesh Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263 STB24NM60N
- STMicroelectronics MDmesh Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220
- STMicroelectronics MDmesh Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220 STP18NM80
- STMicroelectronics MDmesh Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263
- STMicroelectronics MDmesh Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263 STB18NM80