STMicroelectronics MDmesh Type N-Channel MOSFET, 10 A, 600 V Enhancement, 3-Pin TO-220 STF10NM60N
- RS Stock No.:
- 761-2739
- Mfr. Part No.:
- STF10NM60N
- Brand:
- STMicroelectronics
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
Kr. 182,58
(exc. VAT)
Kr. 228,225
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- Plus 75 unit(s) shipping from 01 June 2026
- Plus 340 unit(s) shipping from 08 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | Kr. 36,516 | Kr. 182,58 |
| 25 - 45 | Kr. 34,708 | Kr. 173,54 |
| 50 - 120 | Kr. 31,208 | Kr. 156,04 |
| 125 - 245 | Kr. 28,12 | Kr. 140,60 |
| 250 + | Kr. 26,656 | Kr. 133,28 |
*price indicative
- RS Stock No.:
- 761-2739
- Mfr. Part No.:
- STF10NM60N
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | MDmesh | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 550mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 25W | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10.4mm | |
| Height | 16.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series MDmesh | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 550mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 25W | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10.4mm | ||
Height 16.4mm | ||
Automotive Standard No | ||
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Related links
- STMicroelectronics MDmesh Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- STMicroelectronics MDmesh Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 STP10NM60N
- STMicroelectronics MDmesh Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- STMicroelectronics MDmesh Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- STMicroelectronics MDmesh Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- STMicroelectronics MDmesh Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- STMicroelectronics MDmesh Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- STMicroelectronics MDmesh Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220