onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 2.7 A, 20 V Enhancement, 6-Pin SOT-23 FDC6305N
- RS Stock No.:
- 761-3947
- Mfr. Part No.:
- FDC6305N
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 10 units)*
Kr.60 52
(exc. VAT)
Kr.75 65
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- 7 430 unit(s) shipping from 02. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | Kr. 6,052 | Kr. 60,52 |
| 100 - 490 | Kr. 4,519 | Kr. 45,19 |
| 500 - 990 | Kr. 3,546 | Kr. 35,46 |
| 1000 - 2990 | Kr. 2,871 | Kr. 28,71 |
| 3000 + | Kr. 2,402 | Kr. 24,02 |
*price indicative
- RS Stock No.:
- 761-3947
- Mfr. Part No.:
- FDC6305N
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.7A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | PowerTrench | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 128mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.77V | |
| Maximum Power Dissipation Pd | 960mW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Typical Gate Charge Qg @ Vgs | 3.5nC | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Length | 3mm | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Width | 1.7 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.7A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series PowerTrench | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 128mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.77V | ||
Maximum Power Dissipation Pd 960mW | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Typical Gate Charge Qg @ Vgs 3.5nC | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Length 3mm | ||
Height 1mm | ||
Standards/Approvals No | ||
Width 1.7 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The FDC6305N is an N-Channel MOSFET featuring a low threshold. Designed with PowerTrench® technology it boasts minimise on-state resistance and low-gate charge for superior switching performance.
Features and Benefits:
• Low gate charge
• Fast switching speed
• PowerTrench® technology
• Super small footprint. 72% smaller than a SO08.
The FDC6305N is typically used in these applications;
• Load switching
• DC/DC Converters
• Motor Driving
PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor
ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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