onsemi ECH8310 Type P-Channel MOSFET, 9 A, 30 V Enhancement, 8-Pin ECH ECH8310-TL-H
- RS Stock No.:
- 791-9421
- Mfr. Part No.:
- ECH8310-TL-H
- Brand:
- onsemi
Bulk discount available
Subtotal (1 tape of 10 units)*
Kr.82 83
(exc. VAT)
Kr.103 54
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- 2 350 unit(s) shipping from 05. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 10 - 90 | Kr. 8,283 | Kr. 82,83 |
| 100 - 240 | Kr. 7,139 | Kr. 71,39 |
| 250 - 490 | Kr. 6,189 | Kr. 61,89 |
| 500 - 990 | Kr. 5,434 | Kr. 54,34 |
| 1000 + | Kr. 4,942 | Kr. 49,42 |
*price indicative
- RS Stock No.:
- 791-9421
- Mfr. Part No.:
- ECH8310-TL-H
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | ECH | |
| Series | ECH8310 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 17mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1.5W | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 0.9mm | |
| Width | 2.3 mm | |
| Length | 2.9mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type ECH | ||
Series ECH8310 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 17mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1.5W | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 0.9mm | ||
Width 2.3 mm | ||
Length 2.9mm | ||
Automotive Standard No | ||
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
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