onsemi MGSF2 N-Channel MOSFET, 2.8 A, 20 V Enhancement, 3-Pin SOT-23 MGSF2N02ELT1G
- RS Stock No.:
- 792-5675
- Mfr. Part No.:
- MGSF2N02ELT1G
- Brand:
- onsemi
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 20 units)*
Kr. 127,90
(exc. VAT)
Kr. 159,88
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- Plus 60 unit(s) shipping from 07 September 2026
- Plus 3 000 unit(s) shipping from 04 August 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 180 | Kr. 6,395 | Kr. 127,90 |
| 200 - 480 | Kr. 5,503 | Kr. 110,06 |
| 500 - 980 | Kr. 4,794 | Kr. 95,88 |
| 1000 - 1980 | Kr. 4,21 | Kr. 84,20 |
| 2000 + | Kr. 3,838 | Kr. 76,76 |
*price indicative
- RS Stock No.:
- 792-5675
- Mfr. Part No.:
- MGSF2N02ELT1G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.8A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Series | MGSF2 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 115mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.25W | |
| Typical Gate Charge Qg @ Vgs | 0.6nC | |
| Forward Voltage Vf | 1.5V | |
| Maximum Gate Source Voltage Vgs | 8V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 1.4mm | |
| Length | 3.04mm | |
| Height | 1.01mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.8A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Series MGSF2 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 115mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.25W | ||
Typical Gate Charge Qg @ Vgs 0.6nC | ||
Forward Voltage Vf 1.5V | ||
Maximum Gate Source Voltage Vgs 8V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 1.4mm | ||
Length 3.04mm | ||
Height 1.01mm | ||
Automotive Standard No | ||
N-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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