Nexperia Type N-Channel MOSFET, 100 A, 25 V Enhancement, 4-Pin SOT-669 PSMN0R9-25YLC,115
- RS Stock No.:
- 798-2895
- Mfr. Part No.:
- PSMN0R9-25YLC,115
- Brand:
- Nexperia
Bulk discount available
Subtotal (1 pack of 3 units)*
Kr.82 83
(exc. VAT)
Kr.103 53
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 1 122 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 3 - 27 | Kr. 27,61 | Kr. 82,83 |
| 30 - 72 | Kr. 25,397 | Kr. 76,19 |
| 75 - 147 | Kr. 23,797 | Kr. 71,39 |
| 150 - 297 | Kr. 21,927 | Kr. 65,78 |
| 300 + | Kr. 20,133 | Kr. 60,40 |
*price indicative
- RS Stock No.:
- 798-2895
- Mfr. Part No.:
- PSMN0R9-25YLC,115
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Package Type | SOT-669 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 1.25mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 272W | |
| Typical Gate Charge Qg @ Vgs | 110nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.1mm | |
| Length | 5mm | |
| Width | 4.1 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 25V | ||
Package Type SOT-669 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 1.25mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 272W | ||
Typical Gate Charge Qg @ Vgs 110nC | ||
Maximum Operating Temperature 175°C | ||
Height 1.1mm | ||
Length 5mm | ||
Width 4.1 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
N-Channel MOSFET, up to 30V
MOSFET Transistors, NXP Semiconductors
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