onsemi Isolated PowerTrench 2 Type P, Type N-Channel MOSFET, 6.4 A, 30 V Enhancement, 8-Pin SOIC FDS8958B
- RS Stock No.:
- 806-3674
- Mfr. Part No.:
- FDS8958B
- Brand:
- onsemi
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
Kr. 84,54
(exc. VAT)
Kr. 105,68
(inc. VAT)
FREE delivery for online orders over 750,00 kr
Last RS stock
- Plus 10 unit(s) shipping from 01 June 2026
- Final 370 unit(s) shipping from 08 June 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | Kr. 8,454 | Kr. 84,54 |
| 100 - 490 | Kr. 6,109 | Kr. 61,09 |
| 500 - 990 | Kr. 5,125 | Kr. 51,25 |
| 1000 - 2490 | Kr. 4,37 | Kr. 43,70 |
| 2500 + | Kr. 4,061 | Kr. 40,61 |
*price indicative
- RS Stock No.:
- 806-3674
- Mfr. Part No.:
- FDS8958B
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type P, Type N | |
| Maximum Continuous Drain Current Id | 6.4A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | PowerTrench | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2W | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.8V | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.575mm | |
| Standards/Approvals | No | |
| Length | 4.9mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type P, Type N | ||
Maximum Continuous Drain Current Id 6.4A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series PowerTrench | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2W | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.8V | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature 150°C | ||
Height 1.575mm | ||
Standards/Approvals No | ||
Length 4.9mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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