onsemi PowerTrench Type N-Channel MOSFET, 6.1 A, 30 V Enhancement, 6-Pin SOT-23 FDC855N
- RS Stock No.:
- 809-0871
- Mfr. Part No.:
- FDC855N
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 20 units)*
Kr.119 56
(exc. VAT)
Kr.149 44
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Limited stock
- Plus 20 left, shipping from 19. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 180 | Kr. 5,978 | Kr. 119,56 |
| 200 - 480 | Kr. 5,154 | Kr. 103,08 |
| 500 - 980 | Kr. 4,468 | Kr. 89,36 |
| 1000 - 1980 | Kr. 3,924 | Kr. 78,48 |
| 2000 + | Kr. 3,575 | Kr. 71,50 |
*price indicative
- RS Stock No.:
- 809-0871
- Mfr. Part No.:
- FDC855N
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6.1A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | PowerTrench | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 39mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 9.2nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.8V | |
| Maximum Power Dissipation Pd | 1.6W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 3mm | |
| Standards/Approvals | No | |
| Width | 1.7 mm | |
| Height | 1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6.1A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series PowerTrench | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 39mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 9.2nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.8V | ||
Maximum Power Dissipation Pd 1.6W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 3mm | ||
Standards/Approvals No | ||
Width 1.7 mm | ||
Height 1mm | ||
Automotive Standard No | ||
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Related links
- onsemi PowerTrench Type N-Channel MOSFET 30 V Enhancement, 6-Pin SOT-23
- onsemi PowerTrench Type N-Channel MOSFET 80 V Enhancement, 6-Pin SOT-23
- onsemi PowerTrench Type N-Channel MOSFET 60 V Enhancement, 6-Pin SOT-23
- onsemi PowerTrench Type N-Channel MOSFET 150 V Enhancement, 6-Pin SOT-23
- onsemi PowerTrench Type N-Channel MOSFET 150 V Enhancement, 6-Pin SOT-23 FDC86244
- onsemi PowerTrench Type N-Channel MOSFET 60 V Enhancement, 6-Pin SOT-23 FDC5612
- onsemi PowerTrench Type N-Channel MOSFET 80 V Enhancement, 6-Pin SOT-23 FDC3512
- onsemi PowerTrench Type N-Channel MOSFET 60 V Enhancement, 8-Pin SOIC