Vishay Si1077X Type P-Channel MOSFET, 760 mA, 30 V Enhancement, 6-Pin SC-89 SI1077X-T1-GE3
- RS Stock No.:
- 812-3050
- Mfr. Part No.:
- SI1077X-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 tape of 20 units)*
Kr.66 48
(exc. VAT)
Kr.83 10
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 1 660 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 20 - 180 | Kr. 3,324 | Kr. 66,48 |
| 200 - 980 | Kr. 3,123 | Kr. 62,46 |
| 1000 - 1980 | Kr. 2,82 | Kr. 56,40 |
| 2000 - 4980 | Kr. 2,654 | Kr. 53,08 |
| 5000 + | Kr. 2,50 | Kr. 50,00 |
*price indicative
- RS Stock No.:
- 812-3050
- Mfr. Part No.:
- SI1077X-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 760mA | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | Si1077X | |
| Package Type | SC-89 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 244mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 236mW | |
| Forward Voltage Vf | -1.2V | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 4.43nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.2 mm | |
| Standards/Approvals | No | |
| Height | 0.6mm | |
| Length | 1.7mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 760mA | ||
Maximum Drain Source Voltage Vds 30V | ||
Series Si1077X | ||
Package Type SC-89 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 244mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 236mW | ||
Forward Voltage Vf -1.2V | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 4.43nC | ||
Maximum Operating Temperature 150°C | ||
Width 1.2 mm | ||
Standards/Approvals No | ||
Height 0.6mm | ||
Length 1.7mm | ||
Automotive Standard No | ||
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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