DiodesZetex DMN2005K Type N-Channel MOSFET, 600 mA, 20 V Enhancement, 3-Pin SOT-23 DMN2005K-7
- RS Stock No.:
- 822-2545
- Mfr. Part No.:
- DMN2005K-7
- Brand:
- DiodesZetex
Bulk discount available
Subtotal (1 pack of 50 units)*
Kr.137 95
(exc. VAT)
Kr.172 45
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 200 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 450 | Kr. 2,759 | Kr. 137,95 |
| 500 - 1200 | Kr. 1,533 | Kr. 76,65 |
| 1250 - 4950 | Kr. 1,245 | Kr. 62,25 |
| 5000 + | Kr. 1,213 | Kr. 60,65 |
*price indicative
- RS Stock No.:
- 822-2545
- Mfr. Part No.:
- DMN2005K-7
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 600mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Series | DMN2005K | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.5Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -65°C | |
| Forward Voltage Vf | 0.7V | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Maximum Power Dissipation Pd | 350mW | |
| Typical Gate Charge Qg @ Vgs | 0.5nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Width | 1.4 mm | |
| Length | 3mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 600mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Series DMN2005K | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.5Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -65°C | ||
Forward Voltage Vf 0.7V | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Maximum Power Dissipation Pd 350mW | ||
Typical Gate Charge Qg @ Vgs 0.5nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1mm | ||
Width 1.4 mm | ||
Length 3mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Related links
- Diodes Inc N-Channel MOSFET 20 V, 3-Pin SOT-23 DMN2005K-7
- Diodes Inc DMP2900 P-Channel MOSFET 20 V, 3-Pin SOT-323 DMP2900UW-7
- onsemi PowerTrench N-Channel MOSFET 20 V, 3-Pin SOT-523 FDY302NZ
- onsemi PowerTrench N-Channel MOSFET 20 V, 3-Pin SOT-523 FDY300NZ
- Diodes Inc P-Channel MOSFET 20 V, 3-Pin X1-DFN1212 DMP21D6UFD-7
- Diodes Inc Dual N/P-Channel MOSFET 750 mA 6-Pin SOT-363 DMC2710UDWQ-7
- Nexperia Dual N-Channel MOSFET 20 V, 8-Pin DFN1010B-6 PMDXB600UNEZ
- onsemi PowerTrench Dual N-Channel MOSFET 20 V, 6-Pin SC-89-6 FDY3000NZ