DiodesZetex 2N7002 Type N-Channel MOSFET, 300 mA, 60 V Enhancement, 3-Pin SOT-23 2N7002E-7-F
- RS Stock No.:
- 822-8641
- Mfr. Part No.:
- 2N7002E-7-F
- Brand:
- DiodesZetex
Bulk discount available
Subtotal (1 pack of 150 units)*
Kr.65 85
(exc. VAT)
Kr.82 35
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 300 unit(s) ready to ship
- Plus 19 050 unit(s) shipping from 16. februar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 150 - 600 | Kr. 0,439 | Kr. 65,85 |
| 750 - 1350 | Kr. 0,405 | Kr. 60,75 |
| 1500 - 3600 | Kr. 0,38 | Kr. 57,00 |
| 3750 - 7350 | Kr. 0,35 | Kr. 52,50 |
| 7500 + | Kr. 0,322 | Kr. 48,30 |
*price indicative
- RS Stock No.:
- 822-8641
- Mfr. Part No.:
- 2N7002E-7-F
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 300mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | 2N7002 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 40 V | |
| Maximum Power Dissipation Pd | 540mW | |
| Forward Voltage Vf | 0.7V | |
| Typical Gate Charge Qg @ Vgs | 0.22nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Standards/Approvals | No | |
| Width | 1.4 mm | |
| Length | 3mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 300mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series 2N7002 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 40 V | ||
Maximum Power Dissipation Pd 540mW | ||
Forward Voltage Vf 0.7V | ||
Typical Gate Charge Qg @ Vgs 0.22nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Standards/Approvals No | ||
Width 1.4 mm | ||
Length 3mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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