Infineon OptiMOS-T Type N-Channel MOSFET, 17 A, 250 V Enhancement, 3-Pin TO-263 IPB17N25S3100ATMA1

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Subtotal (1 pack of 20 units)*

Kr.325 22 

(exc. VAT)

Kr.406 52 

(inc. VAT)

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Units
Per unit
Per Pack*
20 +Kr. 16,261Kr. 325,22

*price indicative

Packaging Options:
RS Stock No.:
826-9002
Mfr. Part No.:
IPB17N25S3100ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

17A

Maximum Drain Source Voltage Vds

250V

Series

OptiMOS-T

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

100mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

107W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

14nC

Forward Voltage Vf

0.9V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

10mm

Standards/Approvals

No

Width

9.25 mm

Height

4.4mm

Automotive Standard

AEC-Q101

RoHS Status: Not Applicable

Infineon OptiMOS™T Power MOSFETs


OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode

Automotive AEC Q101 qualified

MSL1 up to 260°C Peak reflow

175°C operating temperature

Green product (RoHS compliant)

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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