DiodesZetex DMG2305UX Type P-Channel MOSFET, 3.3 A, 20 V Enhancement, 3-Pin SOT-23 DMG2305UX-7
- RS Stock No.:
- 827-0452
- Mfr. Part No.:
- DMG2305UX-7
- Brand:
- DiodesZetex
Bulk discount available
Subtotal (1 pack of 100 units)*
Kr.83 10
(exc. VAT)
Kr.103 90
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 400 unit(s) ready to ship
- Plus 91 800 unit(s) shipping from 02. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 100 - 400 | Kr. 0,831 | Kr. 83,10 |
| 500 - 900 | Kr. 0,79 | Kr. 79,00 |
| 1000 - 2400 | Kr. 0,624 | Kr. 62,40 |
| 2500 - 4900 | Kr. 0,593 | Kr. 59,30 |
| 5000 + | Kr. 0,417 | Kr. 41,70 |
*price indicative
- RS Stock No.:
- 827-0452
- Mfr. Part No.:
- DMG2305UX-7
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.3A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Series | DMG2305UX | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 200mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 10.2nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 1.4W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3mm | |
| Width | 1.4 mm | |
| Height | 1.1mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.3A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Series DMG2305UX | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 200mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 10.2nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 1.4W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3mm | ||
Width 1.4 mm | ||
Height 1.1mm | ||
Automotive Standard AEC-Q101 | ||
P-Channel MOSFET, 12V to 25V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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