Texas Instruments NexFET Type N-Channel MOSFET, 75 A, 40 V Enhancement, 8-Pin SON CSD18504Q5A
- RS Stock No.:
- 827-4883
- Mfr. Part No.:
- CSD18504Q5A
- Brand:
- Texas Instruments
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.111 77
(exc. VAT)
Kr.139 71
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 1 420 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | Kr. 22,354 | Kr. 111,77 |
| 25 - 45 | Kr. 21,186 | Kr. 105,93 |
| 50 - 120 | Kr. 19,174 | Kr. 95,87 |
| 125 - 245 | Kr. 17,138 | Kr. 85,69 |
| 250 + | Kr. 16,382 | Kr. 81,91 |
*price indicative
- RS Stock No.:
- 827-4883
- Mfr. Part No.:
- CSD18504Q5A
- Brand:
- Texas Instruments
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Texas Instruments | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 75A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SON | |
| Series | NexFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 9.8mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.8V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 3.1W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 7.7nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 5 mm | |
| Length | 5.8mm | |
| Height | 1.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Texas Instruments | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 75A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SON | ||
Series NexFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 9.8mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.8V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 3.1W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 7.7nC | ||
Maximum Operating Temperature 150°C | ||
Width 5 mm | ||
Length 5.8mm | ||
Height 1.1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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