STMicroelectronics DeepGate, STripFET Type N-Channel MOSFET, 110 A, 100 V Enhancement, 3-Pin H2PAK STH150N10F7-2

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Subtotal (1 pack of 2 units)*

Kr. 83,51

(exc. VAT)

Kr. 104,388

(inc. VAT)

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  • Shipping from 30 November 2026
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Units
Per unit
Per Pack*
2 - 8Kr. 41,755Kr. 83,51
10 - 18Kr. 39,58Kr. 79,16
20 - 48Kr. 35,695Kr. 71,39
50 - 98Kr. 32,145Kr. 64,29
100 +Kr. 30,60Kr. 61,20

*price indicative

Packaging Options:
RS Stock No.:
860-7523
Mfr. Part No.:
STH150N10F7-2
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

100V

Series

DeepGate, STripFET

Package Type

H2PAK

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.9mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

250W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

117nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

4.8mm

Length

10.4mm

Automotive Standard

No

N-Channel STripFET™ DeepGate™, STMicroelectronics


STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics


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