onsemi FQD7P20TM Type P-Channel MOSFET, 5.7 A, 200 V Enhancement, 3-Pin TO-252

RS Stock No.:: 864-4948
Mfr. Part No.:: FQD7P20TM
Brand:: onsemi

onsemi FQD7P20TM Type P-Channel MOSFET, 5.7 A, 200 V Enhancement, 3-Pin TO-252

Bulk discount available

Subtotal (1 reel of 2500 units)*

Kr.12 725 00

(exc. VAT)

Kr.15 900 00

(inc. VAT)

FREE delivery for online orders over 500,00 kr

Supply shortage

Plus 2 500 left, shipping from 29. desember 2025

Our current stock is limited and our suppliers are expecting shortages.

Units	Per unit	Per Reel*
2500 - 10000	Kr. 5,09	Kr. 12 725,00
12500 - 22500	Kr. 4,922	Kr. 12 305,00
25000 +	Kr. 4,795	Kr. 11 987,50

*price indicative

RS Stock No.:: 864-4948
Mfr. Part No.:: FQD7P20TM
Brand:: onsemi

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	5.7A
	Maximum Drain Source Voltage Vds	200V
	Series	FQD7P20TM
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	690mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	19nC
	Maximum Power Dissipation Pd	2.5W
	Maximum Gate Source Voltage Vgs	±30 V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	-5V
	Maximum Operating Temperature	150°C
	Height	2.3mm
	Standards/Approvals	No
	Width	6.1 mm
	Length	6.6mm
	Automotive Standard	No

	Select all
	Brand onsemi
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 5.7A
	Maximum Drain Source Voltage Vds 200V
	Series FQD7P20TM
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 690mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 19nC
	Maximum Power Dissipation Pd 2.5W
	Maximum Gate Source Voltage Vgs ±30 V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf -5V
	Maximum Operating Temperature 150°C
	Height 2.3mm
	Standards/Approvals No
	Width 6.1 mm
	Length 6.6mm
	Automotive Standard No

Enhancement Mode P-Channel MOSFET, ON Semiconductor

ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.

Features and Benefits:

• Voltage controlled P-Channel small signal switch

• High-Density cell design

• High saturation current

• Superior switching

• Great rugged and reliable performance

• DMOS technology

Applications:

• Load Switching

• DC/DC converter

• Battery protection

• Power management control

• DC motor control

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.