Infineon CoolMOS C6 Type N-Channel Power Transistor, 23.8 A, 600 V Enhancement, 3-Pin TO-247 IPW60R160C6FKSA1
- RS Stock No.:
- 897-7172
- Mfr. Part No.:
- IPW60R160C6FKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 4 units)*
Kr.209 392
(exc. VAT)
Kr.261 74
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Last RS stock
- Final 24 unit(s), ready to ship
Units | Per unit | Per Pack* |
|---|---|---|
| 4 - 16 | Kr. 52,348 | Kr. 209,39 |
| 20 - 96 | Kr. 44,445 | Kr. 177,78 |
| 100 - 196 | Kr. 38,495 | Kr. 153,98 |
| 200 - 496 | Kr. 36,695 | Kr. 146,78 |
| 500 + | Kr. 32,69 | Kr. 130,76 |
*price indicative
- RS Stock No.:
- 897-7172
- Mfr. Part No.:
- IPW60R160C6FKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Power Transistor | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 23.8A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-247 | |
| Series | CoolMOS C6 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.16Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 176W | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 75nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 16.13mm | |
| Standards/Approvals | JEDEC J-STD20, JESD22, Pb-Free Plating | |
| Height | 21.1mm | |
| Width | 5.21 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Power Transistor | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 23.8A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-247 | ||
Series CoolMOS C6 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.16Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 176W | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 75nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 16.13mm | ||
Standards/Approvals JEDEC J-STD20, JESD22, Pb-Free Plating | ||
Height 21.1mm | ||
Width 5.21 mm | ||
Automotive Standard No | ||
Infineon CoolMOS™C6/C7 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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