Infineon SIPMOS Type P-Channel MOSFET, 30 A, 60 V Enhancement, 3-Pin TO-252 SPD30P06PGBTMA1

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Subtotal (1 pack of 10 units)*

Kr.107 54 

(exc. VAT)

Kr.134 42 

(inc. VAT)

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10 +Kr. 10,754Kr. 107,54

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Packaging Options:
RS Stock No.:
898-6864
Mfr. Part No.:
SPD30P06PGBTMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-252

Series

SIPMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

75mΩ

Channel Mode

Enhancement

Forward Voltage Vf

-1.3V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

125W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

32nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

6.22 mm

Height

2.41mm

Length

6.73mm

Distrelec Product Id

304-44-484

Automotive Standard

AEC-Q101

RoHS Status: Not Applicable

Infineon SIPMOS® P-Channel MOSFETs


The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A Plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

· AEC Q101 Qualified (Please refer to datasheet)

· Pb-free lead plating, RoHS compliant

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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