Wolfspeed Type N-Channel MOSFET, 5.3 A, 1700 V Enhancement, 7-Pin TO-263 C2M1000170J

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 2 units)*

Kr.210 38 

(exc. VAT)

Kr.262 98 

(inc. VAT)

Add to Basket
Select or type quantity
Last RS stock
  • 258 left, ready to ship
  • Final 22 unit(s) shipping from 07. januar 2026
Units
Per unit
Per Pack*
2 - 8Kr. 105,19Kr. 210,38
10 - 18Kr. 98,725Kr. 197,45
20 - 48Kr. 96,21Kr. 192,42
50 - 98Kr. 93,75Kr. 187,50
100 +Kr. 91,06Kr. 182,12

*price indicative

Packaging Options:
RS Stock No.:
915-8833
Mfr. Part No.:
C2M1000170J
Brand:
Wolfspeed
Find similar products by selecting one or more attributes.
Select all

Brand

Wolfspeed

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

5.3A

Maximum Drain Source Voltage Vds

1700V

Package Type

TO-263

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

1.4Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

78W

Maximum Gate Source Voltage Vgs

25 V

Forward Voltage Vf

3.8V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

13nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

4.57mm

Width

10.99 mm

Length

10.23mm

Automotive Standard

No

COO (Country of Origin):
CN

Wolfspeed Silicon Carbide Power MOSFETs


Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

• Enhancement-mode N-channel SiC technology

• High Drain-Source breakdown voltages - up to 1200V

• Multiple devices are easy to parallel and simple to drive

• High speed switching with low on-resistance

• Latch-up resistant operation

MOSFET Transistors, Wolfspeed


Related links