IXYS X2-Class Type N-Channel MOSFET, 120 A, 650 V Enhancement, 3-Pin TO-264 IXTK120N65X2
- RS Stock No.:
- 917-1441
- Distrelec Article No.:
- 302-53-427
- Mfr. Part No.:
- IXTK120N65X2
- Brand:
- IXYS
Bulk discount available
Subtotal (1 unit)*
Kr.238 85
(exc. VAT)
Kr.298 56
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 4 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 1 - 4 | Kr. 238,85 |
| 5 - 9 | Kr. 228,80 |
| 10 - 24 | Kr. 218,50 |
| 25 - 49 | Kr. 217,59 |
| 50 + | Kr. 206,49 |
*price indicative
- RS Stock No.:
- 917-1441
- Distrelec Article No.:
- 302-53-427
- Mfr. Part No.:
- IXTK120N65X2
- Brand:
- IXYS
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-264 | |
| Series | X2-Class | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 23mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.25kW | |
| Typical Gate Charge Qg @ Vgs | 230nC | |
| Forward Voltage Vf | 1.4V | |
| Maximum Operating Temperature | 150°C | |
| Height | 5.3mm | |
| Width | 26.3 mm | |
| Length | 20.3mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Distrelec Product Id | 30253427 | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-264 | ||
Series X2-Class | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 23mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.25kW | ||
Typical Gate Charge Qg @ Vgs 230nC | ||
Forward Voltage Vf 1.4V | ||
Maximum Operating Temperature 150°C | ||
Height 5.3mm | ||
Width 26.3 mm | ||
Length 20.3mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Distrelec Product Id 30253427 | ||
N-channel Power MOSFET, IXYS X2-Class Series
The IXYS X2 class Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.
Very low RDS(on) and QG (gate charge)
Intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
Related links
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- IXYS HiperFET 100 A 3-Pin TO-264P IXFK100N65X2
- IXYS X2-Class N-Channel MOSFET 650 V, 3-Pin TO-247 IXTH34N65X2
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- IXYS X2-Class N-Channel MOSFET 650 V, 3-Pin TO-247 IXTH12N65X2
