N-Channel MOSFET, 17 A, 100 V, 3-Pin TO-220AB Infineon IRF530NPBF

RS Stock No.:: 919-4842
Mfr. Part No.:: IRF530NPBF
Brand:: Infineon

N-Channel MOSFET, 17 A, 100 V, 3-Pin TO-220AB Infineon IRF530NPBF

Bulk discount available

Subtotal (1 tube of 50 units)**

Kr. 359,50

(exc. VAT)

Kr. 449,50

(inc. VAT)

Available to back order for despatch when stock is available*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over kr 500,00

Units	Per unit	Per Tube**
50 - 50	Kr. 7,19	Kr. 359,50
100 - 200	Kr. 5,539	Kr. 276,95
250 - 450	Kr. 5,177	Kr. 258,85
500 - 1200	Kr. 4,817	Kr. 240,85
1250 +	Kr. 4,46	Kr. 223,00

**price indicative

RS Stock No.:: 919-4842
Mfr. Part No.:: IRF530NPBF
Brand:: Infineon

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 17A Maximum Continuous Drain Current, 70W Maximum Power Dissipation - IRF530NPBF

This high power MOSFET is designed for efficient switching applications, offering robust performance across various environments. Its N-channel enhancement mode configuration makes it suitable for numerous electronic and electrical applications where effective current management is crucial. The key specifications position it as an important component in modern automation and control systems.

Features & Benefits

• Low on-resistance of 90mΩ enhances efficiency
• Maximum drain current handling of 17A
• Operating temperature range from -55°C to +175°C
• Fast switching speed reduces energy losses
• Robust design improves reliability under load
• Versatile TO-220AB package facilitates easy integration

Applications

• Power management in industrial automation
• Integration in motor control circuits
• Utilisation in power supply systems for voltage regulation
• Application in high-efficiency converters and inverters
• Suitable for consumer electronics requiring dynamic load support

Is there a specific gate voltage required for optimal operation?

The device operates effectively with a gate-source voltage range of -20V to +20V, ensuring reliable switching functionality.

What is the maximum pulse drain current capability of this device?

The maximum pulsed drain current is rated at 60A, allowing for transient conditions without compromising device integrity.

How do thermal resistance values affect performance?

With a junction-to-case thermal resistance of 2.15°C/W, effective heat dissipation is vital for maintaining performance during high load operation.

What considerations should I have for soldering this component?

The recommended soldering temperature is 300°C for a duration of 10 seconds. It is important to adhere to this guideline to prevent damage.

Can I use it in applications with a fluctuating power supply?

Yes, the device is designed to handle dynamic conditions, making it appropriate for various applications with variable loads and power sources.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	17 A
Maximum Drain Source Voltage	100 V
Package Type	TO-220AB
Series	HEXFET
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	90 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	70 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Transistor Material	Si
Width	4.69mm
Typical Gate Charge @ Vgs	37 nC @ 10 V
Maximum Operating Temperature	+175 °C
Length	10.54mm
Minimum Operating Temperature	-55 °C
Height	8.77mm
Forward Diode Voltage	1.3V