Infineon HEXFET N-Channel MOSFET, 43 A, 150 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 919-4996
- Mfr. Part No.:
- IRF3415PBF
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (50 units, in tubes of 50)*
Kr. 1 063,90
(exc. VAT)
Kr. 1 329,90
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- Plus 50 unit(s) shipping from 28 September 2026
- Plus 1 000 unit(s) shipping from 18 March 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | Kr. 21,278 | Kr. 1 063,90 |
| 100 - 200 | Kr. 18,725 | Kr. 936,25 |
| 250 - 450 | Kr. 17,448 | Kr. 872,40 |
| 500 - 950 | Kr. 16,172 | Kr. 808,60 |
| 1000 + | Kr. 15,11 | Kr. 755,50 |
*price indicative
- RS Stock No.:
- 919-4996
- Mfr. Part No.:
- IRF3415PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 43A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 42mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 200nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 200W | |
| Maximum Gate Source Voltage Vgs | -20, +20V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.69mm | |
| Height | 8.77mm | |
| Length | 10.54mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 43A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 42mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 200nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 200W | ||
Maximum Gate Source Voltage Vgs -20, +20V | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Width 4.69mm | ||
Height 8.77mm | ||
Length 10.54mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel Power MOSFET 150V to 600V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
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Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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