DiodesZetex Isolated 2 Type N, Type P-Channel MOSFET, 10.5 A, 30 V Enhancement, 8-Pin SOIC DMC3016LSD-13
- RS Stock No.:
- 921-1010
- Mfr. Part No.:
- DMC3016LSD-13
- Brand:
- DiodesZetex
Subtotal (1 pack of 20 units)*
Kr.83 92
(exc. VAT)
Kr.104 90
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 40 unit(s) ready to ship
- Plus 3 860 unit(s) shipping from 02. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 + | Kr. 4,196 | Kr. 83,92 |
*price indicative
- RS Stock No.:
- 921-1010
- Mfr. Part No.:
- DMC3016LSD-13
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N, Type P | |
| Maximum Continuous Drain Current Id | 10.5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | 150°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1.6W | |
| Forward Voltage Vf | 0.7V | |
| Typical Gate Charge Qg @ Vgs | 11.3nC | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Isolated | |
| Height | 1.5mm | |
| Width | 3.95 mm | |
| Standards/Approvals | RoHS, UL 94V-0, AEC-Q101, MIL-STD-202, J-STD-020 | |
| Length | 4.95mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N, Type P | ||
Maximum Continuous Drain Current Id 10.5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature 150°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1.6W | ||
Forward Voltage Vf 0.7V | ||
Typical Gate Charge Qg @ Vgs 11.3nC | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Isolated | ||
Height 1.5mm | ||
Width 3.95 mm | ||
Standards/Approvals RoHS, UL 94V-0, AEC-Q101, MIL-STD-202, J-STD-020 | ||
Length 4.95mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
Related links
- Diodes Inc Dual N/P-Channel MOSFET 30 V, 8-Pin SOIC DMC3016LSD-13
- Diodes Inc Dual N/P-Channel-Channel MOSFET 8.5 A 8-Pin SOIC DMC3021LSD-13
- Diodes Inc Dual N/P-Channel-Channel MOSFET 7.6 A 8-Pin SOIC DMC3028LSDX-13
- Diodes Inc Dual N/P-Channel-Channel MOSFET 30 V, 8-Pin SOIC DMC3026LSD-13
- Infineon HEXFET Dual N/P-Channel-Channel MOSFET 55 V, 8-Pin SOIC AUIRF7343QTR
- Vishay Dual N/P-Channel-Channel MOSFET 8 A 8-Pin SOIC SI4564DY-T1-GE3
- onsemi PowerTrench Dual N/P-Channel-Channel MOSFET 8.6 A 8-Pin SOIC FDS8858CZ
- Infineon HEXFET Dual N/P-Channel-Channel MOSFET 3.5 A 8-Pin SOIC IRF9952TRPBF