OSI Optoelectronics UV-100L Infrared Photodiode, 65 °, Through Hole
- RS Stock No.:
- 176-9786
- Mfr. Part No.:
- UV-100L
- Brand:
- OSI Optoelectronics
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Kr. 2 070,98
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Kr. 2 588,72
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- RS Stock No.:
- 176-9786
- Mfr. Part No.:
- UV-100L
- Brand:
- OSI Optoelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | OSI Optoelectronics | |
| Spectrums Detected | Infrared | |
| Product Type | Photodiode | |
| Wavelength of Peak Sensitivity | 254nm | |
| Mount Type | Through Hole | |
| Packaging | Tape & Reel | |
| Number of Pins | 3 | |
| Maximum Wavelength Detected | 254nm | |
| Typical Fall Time | 0.6ns | |
| Minimum Operating Temperature | -25°C | |
| Amplified | No | |
| Maximum Operating Temperature | 85°C | |
| Width | 5mm | |
| Length | 24.76mm | |
| Height | 4.826mm | |
| Standards/Approvals | RoHS | |
| Diameter | 25.4mm | |
| Angle of Half Sensitivity | 65 ° | |
| Polarity | Forward | |
| Automotive Standard | No | |
| Series | UV | |
| Typical Rise Time | 5.9ns | |
| Dark Current | 500pA | |
| Breakdown Voltage | 30V | |
| Select all | ||
|---|---|---|
Brand OSI Optoelectronics | ||
Spectrums Detected Infrared | ||
Product Type Photodiode | ||
Wavelength of Peak Sensitivity 254nm | ||
Mount Type Through Hole | ||
Packaging Tape & Reel | ||
Number of Pins 3 | ||
Maximum Wavelength Detected 254nm | ||
Typical Fall Time 0.6ns | ||
Minimum Operating Temperature -25°C | ||
Amplified No | ||
Maximum Operating Temperature 85°C | ||
Width 5mm | ||
Length 24.76mm | ||
Height 4.826mm | ||
Standards/Approvals RoHS | ||
Diameter 25.4mm | ||
Angle of Half Sensitivity 65 ° | ||
Polarity Forward | ||
Automotive Standard No | ||
Series UV | ||
Typical Rise Time 5.9ns | ||
Dark Current 500pA | ||
Breakdown Voltage 30V | ||
RoHS Status: Exempted
- COO (Country of Origin):
- US
OSI Optoelectronics offers two distinct families of UV enhanced silicon photodiodes. Inversion channel series and planar diffused series. Both families of devices are especially designed for low noise detection in the UV region of electromagnetic spectrum. Inversion layer structure UV enhanced photodiodes exhibit 100% internal quantum efficiency and are well suited for low intensity light measurements. They have high shunt resistance, low noise and high breakdown voltages. The response uniformity across the surface and quantum efficiency improves with 5 to 10 volts applied reverse bias.
Product Applications
Pollution Monitoring
Medical Instrumentation
UV Exposure Meters
Spectroscopy
Water Purification
Fluorescence
Product Features
Inversion series: 100% Internal QE
Ultra High Shunt Resistance
Excellent UV Response
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