onsemi 650 V 50 A Diode 2-Pin TO-247-2LD FFSH5065B-F155
- RS Stock No.:
- 277-075
- Mfr. Part No.:
- FFSH5065B-F155
- Brand:
- onsemi
Bulk discount available
Subtotal (1 unit)*
Kr.118 98
(exc. VAT)
Kr.148 72
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 04. mai 2026
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Units | Per unit |
|---|---|
| 1 - 9 | Kr. 118,98 |
| 10 - 99 | Kr. 107,08 |
| 100 - 499 | Kr. 98,84 |
| 500 - 999 | Kr. 91,75 |
| 1000 + | Kr. 82,14 |
*price indicative
- RS Stock No.:
- 277-075
- Mfr. Part No.:
- FFSH5065B-F155
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-247-2LD | |
| Maximum Continuous Forward Current If | 50A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | FFSH | |
| Diode Configuration | Single | |
| Pin Count | 2 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 1358A | |
| Maximum Forward Voltage Vf | 2.4V | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Current Ir | 160μA | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Diode | ||
Mount Type Through Hole | ||
Package Type TO-247-2LD | ||
Maximum Continuous Forward Current If 50A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series FFSH | ||
Diode Configuration Single | ||
Pin Count 2 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 1358A | ||
Maximum Forward Voltage Vf 2.4V | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Current Ir 160μA | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
- COO (Country of Origin):
- CN
The ON Semiconductor Schottky diode offer superior switching performance and higher reliability compared to traditional Silicon diodes. It features no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance, making SiC the next generation of power semiconductors. The system benefits include the highest efficiency, faster operating frequency, increased power density, reduced EMI, and smaller, more cost-effective system designs. These advantages make SiC Schottky diodes ideal for high-performance power applications.
Max junction temperature 175°C
Avalanche rated 225 mJ
High surge current capacity
Positive temperature coefficient
Ease of paralleling
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