onsemi 1.2 kV 2 A Schottky Diode & Rectifier 2-Pin TO-220-2 UJ3D1202TS
- RS Stock No.:
- 648-514
- Mfr. Part No.:
- UJ3D1202TS
- Brand:
- onsemi
Subtotal (1 bag of 2 units)*
Kr. 83,28
(exc. VAT)
Kr. 104,10
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Bag* |
|---|---|---|
| 2 + | Kr. 41,64 | Kr. 83,28 |
*price indicative
- RS Stock No.:
- 648-514
- Mfr. Part No.:
- UJ3D1202TS
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Mount Type | Through Hole | |
| Product Type | Schottky Diode & Rectifier | |
| Package Type | TO-220-2 | |
| Maximum Continuous Forward Current If | 2A | |
| Peak Reverse Repetitive Voltage Vrrm | 1.2kV | |
| Series | UJ3 | |
| Diode Configuration | Single | |
| Pin Count | 2 | |
| Peak Reverse Current Ir | 22μA | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 30A | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 2.6V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.16mm | |
| Height | 15.37mm | |
| Width | 4.19mm | |
| Standards/Approvals | Pb-Free, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Mount Type Through Hole | ||
Product Type Schottky Diode & Rectifier | ||
Package Type TO-220-2 | ||
Maximum Continuous Forward Current If 2A | ||
Peak Reverse Repetitive Voltage Vrrm 1.2kV | ||
Series UJ3 | ||
Diode Configuration Single | ||
Pin Count 2 | ||
Peak Reverse Current Ir 22μA | ||
Peak Non-Repetitive Forward Surge Current Ifsm 30A | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 2.6V | ||
Maximum Operating Temperature 175°C | ||
Length 10.16mm | ||
Height 15.37mm | ||
Width 4.19mm | ||
Standards/Approvals Pb-Free, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
The ON Semiconductor Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Easy paralleling
Extremely fast switching not dependent on temperature
No reverse or forward recovery
100% UIS tested
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