onsemi 1200 V 77 A Diode Schottky 2-Pin TO-247 FFSH50120A
- RS Stock No.:
- 178-4413
- Mfr. Part No.:
- FFSH50120A
- Brand:
- onsemi
Bulk discount available
Subtotal (1 unit)*
Kr.234 52
(exc. VAT)
Kr.293 15
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 271 unit(s) shipping from 26. januar 2026
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Units | Per unit |
|---|---|
| 1 - 9 | Kr. 234,52 |
| 10 + | Kr. 202,03 |
*price indicative
- RS Stock No.:
- 178-4413
- Mfr. Part No.:
- FFSH50120A
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Mount Type | Through Hole | |
| Product Type | Diode | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 77A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 1.7kA | |
| Peak Reverse Current Ir | 400μA | |
| Maximum Forward Voltage Vf | 1.75V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Diameter | 6.85 mm | |
| Width | 4.82 mm | |
| Height | 20.82mm | |
| Length | 15.87mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Mount Type Through Hole | ||
Product Type Diode | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 77A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 1.7kA | ||
Peak Reverse Current Ir 400μA | ||
Maximum Forward Voltage Vf 1.75V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Diameter 6.85 mm | ||
Width 4.82 mm | ||
Height 20.82mm | ||
Length 15.87mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 50 A, 1200 V, D1, TO-247-2L Silicon Carbide (SiC) Schottky Diode – EliteSiC, 50 A, 1200 V, D1, TO-247-2L
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Max Junction Temperature 175 °C
Max Junction Temperature 175 °C
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery / No Forward Recovery
Applications
PFC
Industrial Power
Solar
EV Charger
UPS
Welding
Related links
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