Infineon 650 V 16 A Rectifier & Schottky Diode 3-Pin PG-TO-247 IDW16G65C5XKSA1
- RS Stock No.:
- 258-0978
- Mfr. Part No.:
- IDW16G65C5XKSA1
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
Kr. 68,18
(exc. VAT)
Kr. 85,22
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- Plus 2 unit(s) shipping from 20 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | Kr. 68,18 |
| 10 - 24 | Kr. 64,64 |
| 25 - 49 | Kr. 63,38 |
| 50 - 99 | Kr. 59,14 |
| 100 + | Kr. 55,37 |
*price indicative
- RS Stock No.:
- 258-0978
- Mfr. Part No.:
- IDW16G65C5XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Mount Type | Through Hole | |
| Product Type | Rectifier & Schottky Diode | |
| Package Type | PG-TO-247 | |
| Maximum Continuous Forward Current If | 16A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | IDW16G65C5 | |
| Pin Count | 3 | |
| Maximum Forward Voltage Vf | 1.7V | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 95A | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | J-STD20 and JESD22 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Mount Type Through Hole | ||
Product Type Rectifier & Schottky Diode | ||
Package Type PG-TO-247 | ||
Maximum Continuous Forward Current If 16A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series IDW16G65C5 | ||
Pin Count 3 | ||
Maximum Forward Voltage Vf 1.7V | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 95A | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals J-STD20 and JESD22 | ||
Automotive Standard No | ||
The Infineon ThinQ generation 5 represents leading edge technology for the SiC Schottky barrier diodes. Thanks to the more compact design and thin wafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit. The new thinQ Generation 5 has been designed to complement our 650V CoolMOS families this ensures meeting the most stringent application requirements in this voltage range.
Benchmark switching behaviour
No reverse recovery/ No forward recovery
Temperature independent switching behaviour
High surge current capability
Pb-free lead plating; RoHS compliant
Higher system reliability due to lower operating temperatures
Reduced EMI
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