Infineon 650 V 12 A Rectifier & Schottky Diode Rectifier Diode 2-Pin TO-220
- RS Stock No.:
- 273-2744
- Mfr. Part No.:
- IDK12G65C5XTMA2
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
Kr. 52,40
(exc. VAT)
Kr. 65,50
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- Plus 75 unit(s) shipping from 20 July 2026
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Units | Per unit |
|---|---|
| 1 - 49 | Kr. 52,40 |
| 50 - 99 | Kr. 48,05 |
| 100 - 249 | Kr. 43,70 |
| 250 - 499 | Kr. 40,38 |
| 500 + | Kr. 37,75 |
*price indicative
- RS Stock No.:
- 273-2744
- Mfr. Part No.:
- IDK12G65C5XTMA2
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Rectifier & Schottky Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-220 | |
| Maximum Continuous Forward Current If | 12A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | 5th Generation thinQ!TM | |
| Diode Configuration | Single | |
| Rectifier Type | Rectifier Diode | |
| Pin Count | 2 | |
| Peak Reverse Current Ir | 190μA | |
| Maximum Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Rectifier & Schottky Diode | ||
Mount Type Through Hole | ||
Package Type TO-220 | ||
Maximum Continuous Forward Current If 12A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series 5th Generation thinQ!TM | ||
Diode Configuration Single | ||
Rectifier Type Rectifier Diode | ||
Pin Count 2 | ||
Peak Reverse Current Ir 190μA | ||
Maximum Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon SiC Schottky Diode is a silicon carbide schottky barrier diode. The ThinQ Generation 5 represents Infineon leading edge technology for the SiC schottky barrier diode. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit.
RoHS compliant
Pb free lead plating
High surge current capability
Benchmark switching behaviour
Optimized for high temperature operation
Temperature independent switching behaviour
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