Renesas Electronics SRAM, RMLV0416EGSB-4S2#AA1- 4Mbit
- RS Stock No.:
- 250-0190
- Mfr. Part No.:
- RMLV0416EGSB-4S2#AA1
- Brand:
- Renesas Electronics
Bulk discount available
Subtotal (1 unit)*
Kr.70 11
(exc. VAT)
Kr.87 64
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 20. mai 2026
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Units | Per unit |
|---|---|
| 1 - 9 | Kr. 70,11 |
| 10 - 24 | Kr. 64,64 |
| 25 - 49 | Kr. 63,61 |
| 50 - 74 | Kr. 62,92 |
| 75 + | Kr. 61,89 |
*price indicative
- RS Stock No.:
- 250-0190
- Mfr. Part No.:
- RMLV0416EGSB-4S2#AA1
- Brand:
- Renesas Electronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Renesas Electronics | |
| Memory Size | 4Mbit | |
| Organisation | 256k x 16 | |
| Number of Words | 256k | |
| Number of Bits per Word | 16bit | |
| Maximum Random Access Time | 45ns | |
| Low Power | Yes | |
| Mounting Type | Surface Mount | |
| Package Type | TSOP | |
| Pin Count | 44 | |
| Dimensions | 18.41 x 10.16 x 1mm | |
| Maximum Operating Supply Voltage | 3.6 V | |
| Height | 1mm | |
| Minimum Operating Supply Voltage | 2.7 V | |
| Minimum Operating Temperature | -40 °C | |
| Width | 10.16mm | |
| Maximum Operating Temperature | +85 °C | |
| Length | 18.41mm | |
| Select all | ||
|---|---|---|
Brand Renesas Electronics | ||
Memory Size 4Mbit | ||
Organisation 256k x 16 | ||
Number of Words 256k | ||
Number of Bits per Word 16bit | ||
Maximum Random Access Time 45ns | ||
Low Power Yes | ||
Mounting Type Surface Mount | ||
Package Type TSOP | ||
Pin Count 44 | ||
Dimensions 18.41 x 10.16 x 1mm | ||
Maximum Operating Supply Voltage 3.6 V | ||
Height 1mm | ||
Minimum Operating Supply Voltage 2.7 V | ||
Minimum Operating Temperature -40 °C | ||
Width 10.16mm | ||
Maximum Operating Temperature +85 °C | ||
Length 18.41mm | ||
4Mb Advanced LPSRAM (256-kword x 16-bit)
The RMLV0416E Series is a family of 4-Mbit static RAMs organized 262, 144-word x 16-bit, fabricated by Renesass high-performance Advanced LPSRAM technologies. The RMLV0416E Series has realized higher density, higher performance and low power consumption. The RMLV0416E Series offers low power standby power dissipation;therefore, it is suitable for battery backup systems. It is offered in 44-pin TSOP (II) or 48-ball fine pitch ball grid array.
Key features
- Single 3V supply: 2.7V to 3.6V
- Access time: 45ns (max.)
- Current consumption: Standby: 0.3μA (typ.)
- Equal access and cycle times
- Common data input and output Three state output
- Directly TTL compatible All inputs and outputs
- Battery backup operation
Related links
- Renesas Electronics SRAM, RMLV0416EGSB-4S2#AA1- 4Mbit
- Renesas Electronics SRAM, RMLV0408EGSB-4S2#AA1- 4Mbit
- Renesas Electronics SRAM, RMLV0408EGSB-4S2#AA0- 4Mbit
- Renesas Electronics SRAM Memory, RMLV0408EGSP-4S2#CA0- 4Mbit
- Renesas Electronics SRAM, RMLV0414EGSB-4S2#AA0- 4Mbit
- Renesas Electronics SRAM Memory, RMLV0408EGSA-4S2#AA0- 4Mbit
- Renesas Electronics SRAM Memory, 71V416S12PHGI- 4Mbit
- Renesas Electronics SRAM, R1RW0408DGE-2PI#B0- 4Mbit
