Renesas Electronics SRAM, 6116LA25SOGI- 16kB
- RS Stock No.:
- 262-8970
- Mfr. Part No.:
- 6116LA25SOGI
- Brand:
- Renesas Electronics
Bulk discount available
Subtotal (1 unit)*
Kr.72 58
(exc. VAT)
Kr.90 72
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 208 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 1 - 9 | Kr. 72,58 |
| 10 - 24 | Kr. 66,12 |
| 25 - 49 | Kr. 65,09 |
| 50 - 99 | Kr. 64,29 |
| 100 + | Kr. 57,89 |
*price indicative
- RS Stock No.:
- 262-8970
- Mfr. Part No.:
- 6116LA25SOGI
- Brand:
- Renesas Electronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Renesas Electronics | |
| Memory Size | 16kB | |
| Organisation | 2K x 8 | |
| Maximum Random Access Time | 25ns | |
| Select all | ||
|---|---|---|
Brand Renesas Electronics | ||
Memory Size 16kB | ||
Organisation 2K x 8 | ||
Maximum Random Access Time 25ns | ||
- COO (Country of Origin):
- TW
The Renesas Electronics CMOS SRAM is organized as 2K x 8. The SRAM offers a reduced power standby mode. The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.
Low-power consumption
Battery backup operation 2V data retention voltage
Produced with advanced CMOS high-performance technology
CMOS process virtually eliminates alpha particle soft-error rates
Input and output directly TTL-compatible
No clocks or refresh required
Battery backup operation 2V data retention voltage
Produced with advanced CMOS high-performance technology
CMOS process virtually eliminates alpha particle soft-error rates
Input and output directly TTL-compatible
No clocks or refresh required
Related links
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