Infineon Silicon Junction, Single, 30 A, 2-Pin 1.2 kV TO-220 IDP30E120XKSA1
- RS Stock No.:
- 110-7168
- Mfr. Part No.:
- IDP30E120XKSA1
- Brand:
- Infineon
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Add 20 more to save Kr. 124,92
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Kr. 163,36
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Kr. 204,20
(inc. VAT)
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- Shipping from 26 July 2027
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Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
| 10 - 10 | Kr. 16,336 | Kr. 163,36 | - |
| 20 - 90 | Kr. 10,09 | Kr. 100,90 | Kr. 124,92 |
| 100 - 190 | Kr. 9,838 | Kr. 98,38 | Kr. 649,80 |
| 200 - 490 | Kr. 9,598 | Kr. 95,98 | Kr. 1 347,60 |
| 500 + | Kr. 9,346 | Kr. 93,46 | Kr. 3 495,00 |
*price indicative
- RS Stock No.:
- 110-7168
- Mfr. Part No.:
- IDP30E120XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Forward Current If | 30A | |
| Product Type | Silicon Junction | |
| Diode Configuration | Single | |
| Sub Type | Silicon Junction | |
| Mount Type | Through Hole | |
| Package Type | TO-220 | |
| Pin Count | 2 | |
| Maximum Forward Voltage Vf | 2.15V | |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 1.2kV | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 102A | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Recovery Time trr | 380ns | |
| Maximum Power Dissipation Pd | 138W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 4.5mm | |
| Length | 10.2mm | |
| Height | 15.95mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Forward Current If 30A | ||
Product Type Silicon Junction | ||
Diode Configuration Single | ||
Sub Type Silicon Junction | ||
Mount Type Through Hole | ||
Package Type TO-220 | ||
Pin Count 2 | ||
Maximum Forward Voltage Vf 2.15V | ||
Maximum Peak Reverse Repetitive Voltage Vrrm 1.2kV | ||
Peak Non-Repetitive Forward Surge Current Ifsm 102A | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Recovery Time trr 380ns | ||
Maximum Power Dissipation Pd 138W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 4.5mm | ||
Length 10.2mm | ||
Height 15.95mm | ||
Automotive Standard No | ||
Fast Switching Emitter Controlled Diodes, Infineon
The Infineon switching emitter controlled diodes are the Rapid 1 and the Rapid 2 families also the 600 V/1200 V Ultra-soft diodes. The diodes work in various applications from Telecom, UPS, welding, AC-DC and the Ultra-soft version works on motor drive applications up to 30 kHz.
Rapid 1 diode switches between 18kHz and 40kHz
1.35V temperature-stable forward voltage
Ideal for Power Factor Correction (PFC) topologies
The Rapid 2 diode switches between 40 kHz and 100 kHz
Low reverse recovery charge: forward voltage ratio for BiC performance
Low reverse recovery time
Low turn-on losses on the boost switch
Ultra-fast Diode 600 V/1200 V Emitter Controlled technology
Qualified according to JEDEC Standard
Good EMI behaviour
Low conduction losses
Easy paralleling
Diodes and Rectifiers, Infineon
Related links
- Infineon Silicon Junction 30 A, 2-Pin 1200 V TO-220 IDP30E120XKSA1
- IXYS Silicon Junction 30 A, 2-Pin 1200 V TO-220
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- Infineon Silicon Junction 30 A, 3-Pin 600 V TO-247 IDW30E60FKSA1
- Infineon Silicon Junction 30 A, 3-Pin 650 V TO-247 IDW30C65D1XKSA1
- IXYS Silicon Junction 30 A, 2-Pin 1200 V TO-247 DSEP30-12A
- IXYS Silicon Junction 30 A, 2-Pin 600 V TO-220 DSEP29-06B
- Infineon Silicon Junction 80 A, 2-Pin 650 V TO-220 IDP40E65D2XKSA1