STMicroelectronics STGF20H60DF IGBT, 40 A 600 V, 3-Pin TO-220FP, Through Hole
- RS Stock No.:
- 168-7066
- Mfr. Part No.:
- STGF20H60DF
- Brand:
- STMicroelectronics
Available to back order for despatch 19.05.2025
Added
Price Each (In a Tube of 50)
Kr. 20,878
(exc. VAT)
Kr. 26,098
(inc. VAT)
| Units | Per unit | Per Tube* |
| 50 - 50 | Kr. 20,878 | Kr. 1 043,90 |
| 100 - 200 | Kr. 19,885 | Kr. 994,25 |
| 250 + | Kr. 19,389 | Kr. 969,45 |
| *price indicative | ||
- RS Stock No.:
- 168-7066
- Mfr. Part No.:
- STGF20H60DF
- Brand:
- STMicroelectronics
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 40 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 167 W |
| Package Type | TO-220FP |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Dimensions | 10.4 x 4.6 x 15.75mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +175 °C |
- RS Stock No.:
- 168-7066
- Mfr. Part No.:
- STGF20H60DF
- Brand:
- STMicroelectronics