Vishay SiSS60DN Type N-Channel MOSFET, 181.8 A, 30 V Enhancement, 8-Pin PowerPAK 1212

View all MOSFETs

Subtotal (1 reel of 3000 units)*

Kr.20 106 00 

(exc. VAT)

Kr.25 134 00 

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 10. juli 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
3000 +Kr. 6,702Kr. 20 106,00

*price indicative

RS Stock No.:
188-4904
Mfr. Part No.:
SISS60DN-T1-GE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

181.8A

Maximum Drain Source Voltage Vds

30V

Series

SiSS60DN

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

2.01mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

65.8W

Maximum Gate Source Voltage Vgs

16 V

Forward Voltage Vf

0.68V

Typical Gate Charge Qg @ Vgs

57nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

3.3mm

Width

3.3 mm

Standards/Approvals

No

Height

0.78mm

Automotive Standard

No

N-Channel 30 V (D-S) MOSFET with Schottky Diode.

TrenchFET® Gen IV power MOSFET

SKYFET® with monolithic Schottky diode

Optimized RDS x Qg and RDS x Qgd FOM enable higher efficiency for high frequency switching

Related links