Infineon IPL Type N-Channel MOSFET, 29 A, 650 V Enhancement, 5-Pin ThinPAK 8x8 IPL65R095CFD7AUMA1

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Kr.46 31 

(exc. VAT)

Kr.57 89 

(inc. VAT)

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Packaging Options:
RS Stock No.:
240-6615
Mfr. Part No.:
IPL65R095CFD7AUMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

29A

Maximum Drain Source Voltage Vds

650V

Series

IPL

Package Type

ThinPAK 8x8

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

95mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Minimum Operating Temperature

-40°C

Typical Gate Charge Qg @ Vgs

80nC

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

171W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

8.1mm

Automotive Standard

AEC-Q101

The Infineon 650V CoolMOS™ CFD7 super junction MOSFET comes in a ThinPAK 8x8 package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behaviour, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage.

Significantly reduced switching losses compared to competition

Extra safety margin for designs with increased bus voltage

Improved full-load efficiency in industrial SMPS applications

High power density

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