IGBTs

IGBT (insulated-gate bipolar transistors) are semiconductors mainly used as switching devices to allow or stop power flow. They have many benefits as a result of being a cross between two of the most common transistors, Bipolar transistors and MOSFET. What is a typical application of IGBTs? Electric motors Uninterruptible power supplies Solar panel installations Welders Power converters & inverters Inductive chargers Inductive cookersHow do IGBT transistors work?IGBT transistors are three-terminal devices which apply a voltage to a semiconductor, changing its properties to block power flow when it's in the off state and allow power flow in the on state. They are controlled by a metal oxide semiconductor gate structure. IGBT transistors are widely used for switching electrical power in applications such as welding, electric cars, air conditioners, trains and uninterruptible power supplies.What are the different types of IGBT Transistors?There are various types of IGBT transistors and they are categorised by parameters such as maximum voltage, collector current, packaging type and switching speed. The type of IGBT transistor you choose will vary depending on the exact power level, and the applications being considered.What is a difference between MOSFETs and IGBTs?An IGBTs do have a much lower forward voltage drop compared to a conventional MOSFET in a higher blocking voltage rated devices. However, MOSFETs are characterised by a lower forward voltage at lower current densities due to the absence of diode Vf in the IGBT's output BJT.

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Description Price Maximum Continuous Collector Current Maximum Collector Emitter Voltage Maximum Gate Emitter Voltage Maximum Power Dissipation Number of Transistors Package Type Mounting Type Channel Type Pin Count Switching Speed Transistor Configuration Length Width Height
RS Stock No. 168-4686
Mfr. Part No.FGW75N60HD
kr 108,992
Each (In a Tube of 30)
Units
75 A 600 V ±20V 500 W - TO-247 Through Hole N 3 - Single 15.9mm 5.03mm 20.95mm
RS Stock No. 864-8877
Mfr. Part No.FGH60N60SMD-F085
kr 54,93
Each
Units
120 A 600 V ±20V 600 W - TO-247 Through Hole N 3 - Single 15.6mm 4.7mm 20.6mm
RS Stock No. 796-5064
Mfr. Part No.GT50JR22
BrandToshiba
kr 42,87
Each
Units
50 A 600 V ±25V 230 W - TO-3P Through Hole N 3 1MHz Single 15.5mm 4.5mm 20mm
RS Stock No. 146-4357
Mfr. Part No.IXYH25N250CHV
BrandIXYS
kr 207,08
Each
Units
95 A 2500 V ±20 (Continuous) V, ±30 (Transient) V 937 W 1 TO247HV Through Hole - 3 - Single 16.2mm 5.1mm 23mm
RS Stock No. 162-3316
Mfr. Part No.IKY50N120CH3XKSA1
BrandInfineon
kr 62,06
Each
Units
100 A 1200 V ±30V 652 W 1 TO-247 Through Hole P 4 60kHz Single 15.9mm 5.1mm 22.5mm
RS Stock No. 830-3284
Mfr. Part No.IRGP4650D-EPBF
BrandInfineon
kr 67,595
Each (In a Pack of 2)
Units
76 A 600 V ±20V 268 W - TO-247AD Through Hole N 3 - Single 15.87mm 5.31mm 20.7mm
RS Stock No. 124-8810
Mfr. Part No.IKW50N60H3FKSA1
BrandInfineon
kr 43,635
Each (In a Tube of 30)
Units
100 A 600 V ±20V 333 W - TO-247 Through Hole N 3 - Single 16.13mm 5.21mm 21.1mm
RS Stock No. 186-1455
Mfr. Part No.FGY60T120SQDN
kr 83,72
Each
Units
120 A 1200 V ±25V 517 W 1 TO-247 Through Hole N 3 - Single 15.87mm 4.82mm 20.82mm
RS Stock No. 168-7156
Mfr. Part No.STGB10NC60HDT4
kr 5,18
Each (On a Reel of 1000)
Units
10 A 600 V ±20V 65 W - D2PAK (TO-263) Surface Mount N 3 1MHz Single 10.4mm 9.35mm 4.6mm
RS Stock No. 180-8354
Mfr. Part No.IRFU9120PBF
BrandVishay
kr 12,605
Each (In a Tube of 75)
Units
- - - - - - - - - - - - - -
RS Stock No. 170-2372
Mfr. Part No.IHW40N120R3FKSA1
BrandInfineon
kr 47,85
Each
Units
80 A 1200 V ±20V 429 W 1 TO-247 Through Hole N 3 - Single 16.13mm 5.21mm 21.1mm
RS Stock No. 146-4252
Mfr. Part No.IXYH30N170C
BrandIXYS
kr 95,752
Each (In a Tube of 30)
Units
100 A 1700 V ±20 (Continuous) V, ±30 (Transient) V 937 W 1 TO247AD Through Hole - 3 - Single 16.13mm 5.21mm 21.34mm
RS Stock No. 759-9302
Mfr. Part No.FGY75N60SMD
kr 51,54
Each
Units
150 A 600 V ±20V 750 W - TO-247 Through Hole N 3 - Single 15.87mm 4.82mm 20.32mm
RS Stock No. 791-9346
Mfr. Part No.STGF30V60DF
kr 23,948
Each (In a Pack of 5)
Units
60 A 600 V ±20V 260 W - TO-220FP Through Hole N 3 1MHz Single 10.4mm 4.6mm 15.75mm
RS Stock No. 185-0959
Mfr. Part No.RGTV60TS65DGC11
BrandROHM
kr 29,769
Each (In a Tube of 450)
Units
60 A 650 V ±30V 194 W 1 TO-247 Through Hole - 3 - Single 16mm 5mm 21mm
RS Stock No. 145-8592
Mfr. Part No.IGW30N60H3FKSA1
BrandInfineon
kr 22,964
Each (In a Tube of 30)
Units
60 A 600 V ±20V 187 W - TO-247 Through Hole N 3 - Single 16.13mm 5.21mm 21.1mm
RS Stock No. 146-1767
Mfr. Part No.IXYH50N120C3
BrandIXYS
kr 70,614
Each (In a Tube of 30)
Units
100 A 1200 V ±20V 750 W - TO-247 Through Hole N 3 50kHz Single 16.26mm 5.3mm 21.46mm
RS Stock No. 145-8726
Mfr. Part No.IKW40N60H3FKSA1
BrandInfineon
kr 39,229
Each (In a Tube of 30)
Units
80 A 600 V ±20V 306 W - TO-247 Through Hole N 3 - Single 16.13mm 5.21mm 21.1mm
RS Stock No. 808-0262
Mfr. Part No.IXA45IF1200HB
BrandIXYS
kr 101,49
Each
Units
78 A 1200 V ±20V 325 W - TO-247 Through Hole N 3 - Single 16.26mm 5.3mm 21.46mm
RS Stock No. 541-1483
Mfr. Part No.IRG4PC40WPBF
BrandInfineon
kr 37,89
Each
Units
40 A 600 V ±20V - - TO-247AC Through Hole N 3 - Single 15.9mm 5.3mm 20.3mm
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Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by ...
The XPT™ range of discrete IGBTs from IXYS ...
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Fuji Electric has been developing IGBT modules designed to be used as switching elements for power converters of variable-speed drives for motors, uninterruptable power supplies, and more. IGBT has superior characteristics combining the high-speed switching performance of a power MOSEFT ...
The Insulated Gate Bipolar Transistor or IGBT is ...
Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by ...