Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Transistor Type	NPN
	Maximum DC Collector Current	10 A
	Maximum Collector Emitter Voltage	100 V
	Package Type	TO-218
	Mounting Type	Through Hole
	Maximum Power Dissipation	125 W
	Transistor Configuration	Single
	Maximum Collector Base Voltage	100 V dc
	Maximum Emitter Base Voltage	5 V dc
	Pin Count	3
	Number of Elements per Chip	1
	Dimensions	10.53 x 4.83 x 15.75mm
	Maximum Operating Temperature	+150 °C

	Select all
	Brand onsemi
	Transistor Type NPN
	Maximum DC Collector Current 10 A
	Maximum Collector Emitter Voltage 100 V
	Package Type TO-218
	Mounting Type Through Hole
	Maximum Power Dissipation 125 W
	Transistor Configuration Single
	Maximum Collector Base Voltage 100 V dc
	Maximum Emitter Base Voltage 5 V dc
	Pin Count 3
	Number of Elements per Chip 1
	Dimensions 10.53 x 4.83 x 15.75mm
	Maximum Operating Temperature +150 °C

COO (Country of Origin):: CN

The 10 A, 100 V NPN Bipolar Power Transistor is for use as an output devices in complementary general purpose amplifier applications. The BDV65B (NPN) and BDV64B (PNP) are complementary devices.

High DC Current Gain HFE = 1000 (min.) @ 5 Adc
Monolithic Construction with Built-in Base Emitter Shunt Resistors
These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices

onsemi BDV65BG NPN Transistor, 10 A, 100 V, 3-Pin TO-218