onsemi Transistor, 10 A NPN, 40 V, 3-Pin TO-225
- RS Stock No.:
- 184-4314
- Mfr. Part No.:
- MJE200G
- Brand:
- onsemi
Bulk discount available
View bulk pricing optionsSubtotal (1 box of 500 units)*
Kr. 2 148,50
(exc. VAT)
Kr. 2 685,50
(inc. VAT)
FREE delivery for online orders over 750,00 kr
Temporarily out of stock
- 500 unit(s) shipping from 16 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Box* |
|---|---|---|
| 500 - 500 | Kr. 4,297 | Kr. 2 148,50 |
| 1000 - 2000 | Kr. 3,519 | Kr. 1 759,50 |
| 2500 - 9500 | Kr. 3,493 | Kr. 1 746,50 |
| 10000 + | Kr. 3,472 | Kr. 1 736,00 |
*price indicative
- RS Stock No.:
- 184-4314
- Mfr. Part No.:
- MJE200G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 10A | |
| Maximum Collector Emitter Voltage Vceo | 40V | |
| Package Type | TO-225 | |
| Mount Type | Through Hole | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 25V dc | |
| Maximum Emitter Base Voltage VEBO | 8V dc | |
| Minimum DC Current Gain hFE | 10 | |
| Transistor Polarity | NPN | |
| Maximum Transition Frequency ft | 10MHz | |
| Maximum Power Dissipation Pd | 15W | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Standards/Approvals | No | |
| Height | 27.1mm | |
| Series | MJE200 | |
| Length | 8mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 10A | ||
Maximum Collector Emitter Voltage Vceo 40V | ||
Package Type TO-225 | ||
Mount Type Through Hole | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 25V dc | ||
Maximum Emitter Base Voltage VEBO 8V dc | ||
Minimum DC Current Gain hFE 10 | ||
Transistor Polarity NPN | ||
Maximum Transition Frequency ft 10MHz | ||
Maximum Power Dissipation Pd 15W | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Standards/Approvals No | ||
Height 27.1mm | ||
Series MJE200 | ||
Length 8mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Bipolar Power Transistor is designed for low voltage, low power and high gain audio amplifier applications. The MJE200 (NPN) and MJE210 (PNP) are complementary devices.
High DC Current Gain
Low Collector-Emitter Saturation Voltage
High Current-Gain - Bandwidth Product
Annular Construction for Low Leakage
These Devices are Pb-Free
