onsemi MJB44H11G Transistor, 20 A NPN, 80 V dc, 4-Pin TO-263
- RS Stock No.:
- 184-4959
- Mfr. Part No.:
- MJB44H11G
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 10 units)*
Kr. 105,02
(exc. VAT)
Kr. 131,28
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- 80 unit(s) ready to ship
- Plus 50 unit(s) shipping from 14 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | Kr. 10,502 | Kr. 105,02 |
| 100 - 240 | Kr. 7,836 | Kr. 78,36 |
| 250 - 490 | Kr. 7,745 | Kr. 77,45 |
| 500 - 990 | Kr. 6,635 | Kr. 66,35 |
| 1000 + | Kr. 6,258 | Kr. 62,58 |
*price indicative
- RS Stock No.:
- 184-4959
- Mfr. Part No.:
- MJB44H11G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 20A | |
| Maximum Collector Emitter Voltage Vceo | 80V dc | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Minimum Operating Temperature | -55°C | |
| Maximum Transition Frequency ft | 1MHz | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 60 | |
| Maximum Emitter Base Voltage VEBO | 5V dc | |
| Maximum Power Dissipation Pd | 50W | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 11.05mm | |
| Height | 4.83mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 20A | ||
Maximum Collector Emitter Voltage Vceo 80V dc | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Minimum Operating Temperature -55°C | ||
Maximum Transition Frequency ft 1MHz | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 60 | ||
Maximum Emitter Base Voltage VEBO 5V dc | ||
Maximum Power Dissipation Pd 50W | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 11.05mm | ||
Height 4.83mm | ||
Automotive Standard AEC-Q101 | ||
The PNP Bipolar Power Transistor is designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. The MJB44H11 (NPN) and MJB45H11 (PNP) are complementary devices.
Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 V (Max) @ 8.0 A
Fast Switching Speeds
Complementary Pairs Simplifies Designs
NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, PPAP Capable
These Devices are Pb-Free, Halogen Free/BFR Free
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