Infineon NPN RF Bipolar Transistor, 50 mA NPN, 4 V, 4-Pin TSFP
- RS Stock No.:
- 216-8351
- Mfr. Part No.:
- BFP640FH6327XTSA1
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 3000 units)*
Kr. 7 824,00
(exc. VAT)
Kr. 9 780,00
(inc. VAT)
FREE delivery for online orders over 750,00 kr
Temporarily out of stock
- Shipping from 07 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | Kr. 2,608 | Kr. 7 824,00 |
| 6000 - 6000 | Kr. 2,478 | Kr. 7 434,00 |
| 9000 + | Kr. 2,321 | Kr. 6 963,00 |
*price indicative
- RS Stock No.:
- 216-8351
- Mfr. Part No.:
- BFP640FH6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | NPN RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 50mA | |
| Maximum Collector Emitter Voltage Vceo | 4V | |
| Package Type | TSFP | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 13V | |
| Maximum Power Dissipation Pd | 200mW | |
| Maximum Transition Frequency ft | 42GHz | |
| Minimum Operating Temperature | -55°C | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 110 | |
| Maximum Emitter Base Voltage VEBO | 1.2V | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Series | BFP640F | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type NPN RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 50mA | ||
Maximum Collector Emitter Voltage Vceo 4V | ||
Package Type TSFP | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 13V | ||
Maximum Power Dissipation Pd 200mW | ||
Maximum Transition Frequency ft 42GHz | ||
Minimum Operating Temperature -55°C | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 110 | ||
Maximum Emitter Base Voltage VEBO 1.2V | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Series BFP640F | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon BFP series is a RF bipolar transistor based on silicon germanium technology. Its transition frequency of 42 GHz and high linearity characteristics at low currents make the device suitable for energy efficiency designs at frequency as high as 8 GHz. It remains cost competitive without compromising on ease of use.
Provides outstanding performance for a wide range of wireless applications
Ideal for CDMA and WLAN applications
High maximum stable gain
Gold metallization for extra high reliability
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