Infineon BFP520H6327XTSA1 RF Bipolar Transistor, 50 mA NPN, 10 V, 4-Pin TSFP-4-1
- RS Stock No.:
- 259-1430
- Distrelec Article No.:
- 304-40-487
- Mfr. Part No.:
- BFP520H6327XTSA1
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 25 units)*
Kr. 80,075
(exc. VAT)
Kr. 100,10
(inc. VAT)
FREE delivery for online orders over 750,00 kr
Last RS stock
- Final 2 975 unit(s), ready to ship
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 225 | Kr. 3,203 | Kr. 80,08 |
| 250 - 600 | Kr. 2,201 | Kr. 55,03 |
| 625 - 1225 | Kr. 2,05 | Kr. 51,25 |
| 1250 - 2475 | Kr. 1,922 | Kr. 48,05 |
| 2500 + | Kr. 1,46 | Kr. 36,50 |
*price indicative
- RS Stock No.:
- 259-1430
- Distrelec Article No.:
- 304-40-487
- Mfr. Part No.:
- BFP520H6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 50mA | |
| Maximum Collector Emitter Voltage Vceo | 10V | |
| Package Type | TSFP-4-1 | |
| Mount Type | Surface | |
| Transistor Configuration | Common Emitter | |
| Maximum Collector Base Voltage VCBO | 10V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Emitter Base Voltage VEBO | 1V | |
| Maximum Transition Frequency ft | 45GHz | |
| Minimum DC Current Gain hFE | 70 | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 120mW | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Series | BFP520F | |
| Height | 0.9mm | |
| Standards/Approvals | RoHS | |
| Length | 2mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 50mA | ||
Maximum Collector Emitter Voltage Vceo 10V | ||
Package Type TSFP-4-1 | ||
Mount Type Surface | ||
Transistor Configuration Common Emitter | ||
Maximum Collector Base Voltage VCBO 10V | ||
Minimum Operating Temperature -55°C | ||
Maximum Emitter Base Voltage VEBO 1V | ||
Maximum Transition Frequency ft 45GHz | ||
Minimum DC Current Gain hFE 70 | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 120mW | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Series BFP520F | ||
Height 0.9mm | ||
Standards/Approvals RoHS | ||
Length 2mm | ||
Automotive Standard No | ||
The Infineon NPN silicon RF transistor. It is various applications like cellular and Cordless phones, DECT, Tuners, FM, and RF modems.
For low noise, high-gain amplifiers up to 2 GHz
For linear broadband amplifiers
fT 8 GHz, NFmin 1 dB at 900 MHz
Pb-free (RoHS compliant) package
Related links
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