Infineon BFR183E6327HTSA1 Bipolar Transistor, 65 mA NPN, 20 V, 3-Pin SOT-23

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Subtotal (1 pack of 25 units)*

Kr. 31,80

(exc. VAT)

Kr. 39,75

(inc. VAT)

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In Stock
  • Plus 150 unit(s) shipping from 08 June 2026
  • Plus 9 000 unit(s) shipping from 16 July 2026
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Units
Per unit
Per Pack*
25 - 225Kr. 1,272Kr. 31,80
250 - 600Kr. 1,236Kr. 30,90
625 - 1225Kr. 1,204Kr. 30,10
1250 - 2475Kr. 1,172Kr. 29,30
2500 +Kr. 1,144Kr. 28,60

*price indicative

Packaging Options:
RS Stock No.:
258-7737
Mfr. Part No.:
BFR183E6327HTSA1
Brand:
Infineon
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Brand

Infineon

Product Type

Bipolar Transistor

Maximum DC Collector Current Idc

65mA

Maximum Collector Emitter Voltage Vceo

20V

Package Type

SOT-23

Mount Type

Surface

Transistor Configuration

NPN

Maximum Collector Base Voltage VCBO

20V

Maximum Power Dissipation Pd

450mW

Minimum Operating Temperature

-55°C

Minimum DC Current Gain hFE

70

Maximum Emitter Base Voltage VEBO

2V

Maximum Transition Frequency ft

8GHz

Transistor Polarity

NPN

Maximum Operating Temperature

150°C

Pin Count

3

Length

2.9mm

Height

1mm

Standards/Approvals

RoHS

Series

BFR183

Automotive Standard

AEC-Q101

The Infineon low noise silicon bipolar RF transistor is for low noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA. This transistor is used for amplifier and oscillator applications in RF front end and wireless communications

Pb free RoHS compliant package

VCEO max is 12 V

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