Infineon BGB741L7ESDE6327XTSA1 RF Bipolar Transistor, 10 mA, 7-Pin TSLP-7-1
- RS Stock No.:
- 261-3960
- Mfr. Part No.:
- BGB741L7ESDE6327XTSA1
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
Kr. 84,20
(exc. VAT)
Kr. 105,20
(inc. VAT)
FREE delivery for online orders over 750,00 kr
Temporarily out of stock
- Shipping from 27 January 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | Kr. 8,42 | Kr. 84,20 |
| 20 - 90 | Kr. 7,573 | Kr. 75,73 |
| 100 - 240 | Kr. 6,841 | Kr. 68,41 |
| 250 - 490 | Kr. 6,12 | Kr. 61,20 |
| 500 + | Kr. 5,548 | Kr. 55,48 |
*price indicative
- RS Stock No.:
- 261-3960
- Mfr. Part No.:
- BGB741L7ESDE6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 10mA | |
| Package Type | TSLP-7-1 | |
| Mount Type | Surface | |
| Maximum Transition Frequency ft | 3.5GHz | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 120mW | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 7 | |
| Width | 1.3mm | |
| Height | 0.4mm | |
| Length | 2mm | |
| Series | BGB741L7ESD | |
| Standards/Approvals | JEDEC47/20/22 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 10mA | ||
Package Type TSLP-7-1 | ||
Mount Type Surface | ||
Maximum Transition Frequency ft 3.5GHz | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 120mW | ||
Maximum Operating Temperature 150°C | ||
Pin Count 7 | ||
Width 1.3mm | ||
Height 0.4mm | ||
Length 2mm | ||
Series BGB741L7ESD | ||
Standards/Approvals JEDEC47/20/22 | ||
Automotive Standard No | ||
The Infineon high performance broadband low noise amplifier with MMIC based on silicon germanium carbon bipolar technology. Its for application of satellite navigation systems and wireless communications.
High RF input power robustness of 20 dBm
Minimum noise figure
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