Infineon BFP842ESDH6327XTSA1 Bipolar Transistor, 40 mA NPN, 3.7 V, 4-Pin SOT-343
- RS Stock No.:
- 273-2850
- Mfr. Part No.:
- BFP842ESDH6327XTSA1
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
Kr. 44,39
(exc. VAT)
Kr. 55,49
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- 2 420 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | Kr. 4,439 | Kr. 44,39 |
| 50 - 90 | Kr. 4,336 | Kr. 43,36 |
| 100 - 240 | Kr. 3,306 | Kr. 33,06 |
| 250 - 990 | Kr. 3,238 | Kr. 32,38 |
| 1000 + | Kr. 2,151 | Kr. 21,51 |
*price indicative
- RS Stock No.:
- 273-2850
- Mfr. Part No.:
- BFP842ESDH6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Bipolar Transistor | |
| Maximum DC Collector Current Idc | 40mA | |
| Maximum Collector Emitter Voltage Vceo | 3.7V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 4.1V | |
| Transistor Polarity | NPN | |
| Minimum Operating Temperature | -55°C | |
| Maximum Transition Frequency ft | 57GHz | |
| Maximum Power Dissipation Pd | 120mW | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC47/20/22, RoHS | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Bipolar Transistor | ||
Maximum DC Collector Current Idc 40mA | ||
Maximum Collector Emitter Voltage Vceo 3.7V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 4.1V | ||
Transistor Polarity NPN | ||
Minimum Operating Temperature -55°C | ||
Maximum Transition Frequency ft 57GHz | ||
Maximum Power Dissipation Pd 120mW | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC47/20/22, RoHS | ||
The Infineon high performance RF heterojunction bipolar transistor with an integrated ESD protection suitable for 2.3 to 3.5 GHz LNA applications.
Suitable for low voltage applications
It has application in wireless communications like WLAN, WiMAX and Bluetooth
Related links
- Infineon BFP842ESDH6327XTSA1 Bipolar Transistor 3.7 V, 4-Pin SOT-343
- Infineon BFP842ESDH6327XTSA1 RF Bipolar Transistor 3.25 V, 4-Pin SOT-343
- Infineon RF Bipolar Transistor 4.5 V, 4-Pin SOT-343
- Infineon BFP410H6327XTSA1 RF Bipolar Transistor 4.5 V, 4-Pin SOT-343
- Infineon RF Bipolar Transistor 15 V, 4-Pin SOT-343
- Infineon RF Bipolar Transistor 4 V, 4-Pin SOT-343
- Infineon RF Bipolar Transistor 2.25 V, 4-Pin SOT-343
- Infineon RF Bipolar Transistor 80 V, 4-Pin SOT-343