Infineon BFP842ESDH6327XTSA1 RF Bipolar Transistor, 40 mA NPN, 3.25 V, 4-Pin SOT-343

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We don't know if this item will be back in stock, RS intend to remove it from our range soon.
Packaging Options:
RS Stock No.:
170-2366
Mfr. Part No.:
BFP842ESDH6327XTSA1
Brand:
Infineon
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Brand

Infineon

Product Type

RF Bipolar Transistor

Maximum DC Collector Current Idc

40mA

Maximum Collector Emitter Voltage Vceo

3.25V

Package Type

SOT-343

Mount Type

Surface Mount

Transistor Configuration

Single

Maximum Collector Base Voltage VCBO

4.1V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

120mW

Transistor Polarity

NPN

Maximum Emitter Base Voltage VEBO

4.1V

Maximum Transition Frequency ft

57GHz

Maximum Operating Temperature

150°C

Pin Count

4

Length

2.1mm

Width

1.25 mm

Height

1.3mm

Series

BFP842ESD

Standards/Approvals

JEDEC47/20/22

The BFP842ESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for 2.3 - 3.5 GHz LNA applications. The device is based upon the reliable high volume SiGe:C technology of Infineon. The BFP842ESD provides inherently good input power match as well as inherently good noise match between 2.3 and 3.5 GHz. The simultaneous noise and power match without lossy external matching components at the input leads to a low external parts count, to a very good noise figure and to a high transducer gain in the application.

Robust very low noise amplifier based on Infineon's reliable, high volume

SiGe:C technology

Unique combination of high end RF performance and robustness

High linearity

High transition frequency

Transducer gain

Ideal for low voltage applications

Low power consumption, ideal for mobile applications

Easy to use Pb free and halogen free industry standard package with visible leads

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